Signal Source Input GaN Broadband 6-7GHz 200W RF Amplifier

This200W GaN RF amplifier module is engineered as a 6‑7GHz broadband RF amplifier optimized for signal source integrated test environments. Operating across 6000‑7000 MHz, this 200W GaN RF amplifier module features 50‑ohm input and output impedance matching for stable system connection. Adopting gallium nitride chip‑and‑wire technology, the 6‑7GHz broadband RF amplifier delivers typical 200W saturated output power with excellent power‑to‑volume ratio.Designed for signal source linked EMC, measurement and jamming tasks, this 200W GaN RF amplifier module has compact lightweight construction. Built‑in control and protection circuits trigger automatic shutdown under over‑temperature or over‑current conditions. It resumes operation automatically after cooling for over‑temperature faults, while over‑current failures require manual power‑cycle reset. Powered by +28VDC, the 6‑7GHz broadband RF amplifier maintains steady performance with low harmonics and spurious signals within‑20℃ to +50℃ working temperature range.