2-6GHz 80W GaN Wideband RF Power Amplifier Module
ZD-PA-2/6G-80W
This 2-6GHz GaN multi‑octave wide‑band RF power amplifier module adopts gallium nitride chip‑and‑wire technology. It delivers 80W saturated output power with instantaneous ultra‑broadband capability for jamming simulation EMC and various RF test‑and‑measurement tasks. 50‑ohm impedance matching is applied for both input and output. It features typical 50dB gain ±2dB gain flatness and excellent harmonic and spurious suppression. Built‑in control and protection circuits trigger auto‑shutdown under over‑temperature over‑voltage and over‑current conditions and withstand continuous 3:1 full‑phase VSWR. It supports RS485 serial communication with SMA‑K input N‑K output and D‑Sub7W2 DC connector. Compact and lightweight powered by 28VDC it operates from‑30℃ to 55℃ for lab and field deployment.
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Built with proven GaN technology, this 80W RF power amplifier acts as a high‑performance 2000‑6000MHz wideband power amplifier module. Its key advantage lies in steady 80W output power across the full 2000‑6000MHz frequency band avoiding power roll‑off issues common among similar broadband amplifiers and realizing multi‑octave instantaneous ultra‑broadband amplification. This 2000‑6000MHz wideband power amplifier module delivers peak saturated power up to 100W. As a solid 80W RF power amplifier, it achieves excellent power‑to‑volume ratio for jamming simulation EMC calibration and RF test‑and‑measurement integration. Benefiting from GaN technology, it maintains stable gain and good harmonic spurious suppression with standard 50‑ohm impedance matching. Multi‑protection circuits trigger auto‑shutdown under faults and support continuous 3:1 full‑phase VSWR. RS485 enables host‑computer control. Compact with SMA‑K input and N‑K output it works reliably from ‑30℃ to 55℃ for lab tuning and field deployment.
| Operating Frequency | 2-6GHz |
| RF Output Power | 80W |
| Power Gain | 50dB |
| Power Gain Flatness | ±2dB |
| Input Return Loss | ≤-10dB |
| Harmonics | -12dBc |
| Spurious Signals | -60dBc |
| In/Output Impedance | 50Ω |
| Operating Voltage | 28V |
| DC Current | 15A |
| Input RF drive level without damage | +10 dBm |
| Load VSWR | 3:1 @ all load phase & amplitude continuous |
| Thermal Overload | 85°C ±5°C shutdown |
| Operating Temperature | -30~55℃ |
| Storage Temperature | -40~65℃ |
| Relative Humidity (non-condensing) | 95% |
| Dimensions | 180x120x25mm |
| Weight | 2kg |
| RF Connectors Input | SMA-K, Female |
| RF Connectors Output | N-K, Female |
| DC Interface Connector | Hybrid, D-Sub7W2, Male |
