200W 5‑6GHz GaN RF High Power Broadband Amplifier Module

ThisGaN RF power amplifier is a compact, lightweight 200W RF amplifier module optimized as a 5‑6GHz broadband amplifier for professional RF engineering tasks. Operating across 5000‑6000MHz frequency range with 50‑ohm input and output impedance matching, this unit delivers minimum 160W saturated output power with typical 200W output power.Built with gallium nitride chip‑and‑wire technology, the GaN RF power amplifier achieves excellent power‑to‑volume ratio, stable power gain and low harmonic & spurious outputs. This 5‑6GHz broadband amplifier integrates internal control and multi‑protection circuits. It triggers automatic shutdown for over‑temperature or over‑current faults. After over‑temperature faults, the 200W RF amplifier module auto‑recovers when temperature drops; over‑current incidents require manual power‑cycle reset.Powered by +28VDC, it suits jamming, EMC, test and measurement. It reliably works under‑20℃~+50℃ operating temperature for various demanding field and lab environments.