Dual‑Channel 50W GaN RF Power Amplifier 10.7‑11.7GHz 11.8‑12.8GHz

Thisdual‑channel GaN power amplifier is a high‑performance RF amplification unit built with gallium‑nitride semiconductor technology. As a robust 50W GaN power amplifier module, it covers two working frequency bands of 10.7‑11.7GHz 11.8‑12.8GHz rf amplifier, belonging to typical X‑band broadband power amplifier module for high‑power RF applications.It adopts chip‑and‑wire micro‑assembly craft to realize compact size and lightweight structure with outstanding power‑to‑volume ratio. Input and output ports adopt standard 50Ω impedance matching, delivering stable saturated output power, flat gain response, low harmonic and spurious signals. Equipped with built‑in over‑temperature and over‑current protection circuits, the unit will auto‑shut down under abnormal conditions to avoid hardware damage. Supporting TTL channel enable signal and RS485 serial communication, this amplifier is easy for system integration, widely applied in jamming simulation, RF test and other X‑band high‑power scenarios, and maintains stable performance in complex environmental conditions.