400-2500MHz 50W GaN RF Power Amplifier Module with Multi Protection
ZD-PA-400/2500M-50W
This 400‑2500MHz GaN broadband RF power amplifier module adopts gallium nitride chip‑and‑wire technology with typical 50W saturated output power. As a multi‑octave ultra‑broadband HPA, it fits jamming simulation, EMC and various RF test‑and‑measurement applications. Both input and output impedance are 50 Ohms. It delivers typical 48dB power gain with ±2dB gain flatness,‑12dBc harmonic suppression and‑60dBc spurious rejection. Built‑in control and protection circuits realize auto‑shutdown for over‑temperature, over‑voltage and over‑current faults, and it withstands continuous 3:1 full‑phase load VSWR. It supports RS485 serial communication, with SMA‑K input, N‑K RF output and D‑Sub7W2 DC connector. Compact and lightweight, it operates from‑30℃ to 65℃ for lab and field deployment.
Quantity:
As a high‑performance 50W broadband RF amplifier, this GaN RF power amplifier module operates across 400‑2500MHz. Adopting gallium‑nitride chip‑and‑wire technology, it achieves outstanding power‑to‑volume ratio and overcomes the bulky drawbacks of conventional amplifiers, delivering a compact and reliable power‑amplifying solution for broadband RF engineering. This GaN RF power amplifier module is well‑suited for jamming simulation, EMC calibration and diverse RF test‑and‑measurement tasks. Its instantaneous multi‑octave 400‑2500MHz bandwidth eliminates band‑segment tuning work and eases system integration greatly. Serving as a robust 50W broadband RF amplifier, it integrates comprehensive control and protection circuits with auto‑shutdown against over‑temperature, over‑voltage and over‑current, and handles continuous 3:1 full‑phase load VSWR. RS485 interface supports remote monitoring. With 50‑ohm matching, SMA input and N‑K output, this compact unit performs reliably from ‑30℃ to 65℃ for both lab and field deployment.
| Frequency Range | 0.4-2.5GHz |
| Saturated Output Power | 50W |
| Power Gain | 47dB |
| Power Gain Flatness | ±2dB |
| Input Return Loss | -10dB |
| Harmonics @50W | -12dBc |
| Spurious Signals @PSAT | -60dBc |
| Operating voltage | 28V |
| Impedance | 50Ω |
| Power add efficiency | 30% |
| DC Current @50W | 8A |
| Input RF drive level without damage | +5 dBm |
| Load VSWR @ POUT =50W | 3:1 @ all load phase & amplitude continuous |
| Thermal Overload | 85°C ±5°C shutdown |
| Temperature | Operating: -30℃~+65℃; Storage: -30℃~+65℃ |
| Environmental | 5%~95%,No condensation |
| Dimensions | 170x94x26.5mm |
| RF Connectors Input | SMA-K, Female |
| DC Interface Connector | Hybrid, D-Sub7W2, Male |
