7‑8GHz 200W Saturated GaN RF Amplifier Module

ThisSaturated GaN RF amplifier is a robust multi‑octave 7‑8GHz RF amplifier module delivering up to 200w saturated output power for X‑band RF applications. Operating across 7000‑8000 MHz with 50‑ohm input and output matching, the Saturated GaN RF amplifier adopts gallium nitride chip‑and‑wire technology to achieve outstanding power‑to‑volume ratio.The compact‑sized 7‑8GHz RF amplifier module features flat gain performance, low harmonics and spurious signals. Powered by +28 VDC, this 200w power unit integrates built‑in control and protection circuits. It automatically shuts down under over‑temperature or over‑current conditions. After over‑temperature triggers, the unit resumes operation once cooled; over‑current faults require manual power‑cycle reset. Well‑suited for jamming, EMC and test‑and‑measurement, the amplifier reliably operates from ‑20 °C to +50 °C in laboratory and field environments.