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 broadband pa

GaN 5100-5900MHz 30W Smart PA Module with Dual Temp and VSWR Protection for 5G

ZD-PA- 5100/5900M-30W
The ZD Customized 5100-5900MHz C-Band Power Amplifier Module delivers 30W high-power output for next-generation wireless applications. This advanced C-Band amplifier features real-time thermal protection and adaptive impedance matching to ensure reliable performance in 5G NR, satellite communications, and radar systems. Its wideband design maintains stable amplification across the entire 5.1-5.9GHz spectrum, while the high-efficiency architecture minimizes power consumption. The ruggedized aluminum housing with SMA-KFD connectors provides excellent EMI shielding and durability for demanding environments. With integrated smart monitoring capabilities, this module offers comprehensive protection against over-temperature and RF mismatch conditions. Ideal for both commercial and defense applications, it supports flexible deployment in base stations, UAV payloads, and mobile command systems while operating reliably across industrial temperature ranges.
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The ZD 5100-5900MHz 30W power amplifier represents a cutting-edge solution for modern 5G power amplifier applications, delivering exceptional performance across the entire C-band spectrum. This broadband PA module features a robust 45±1dBm saturated output (approximately 30W) with outstanding 45±2dB gain, making it ideal for 5G base stations, small cells, and other high-density wireless infrastructure. The amplifier maintains excellent in-band flatness (

Engineered for reliability, this high-performance module incorporates comprehensive thermal protection through an intelligent monitoring system. The precision temperature sensing circuitry provides real-time voltage feedback (10mV/°C) with 25°C as baseline, enabling automatic power adjustment and shutdown protection when necessary. Combined with the efficient milled aluminum housing, this thermal management system allows continuous operation in demanding environments (-10°C to +55°C). The 30W power amplifier design utilizes advanced GaN technology to achieve high efficiency while minimizing heat generation, significantly improving system reliability and lifespan.

The broadband PA architecture demonstrates exceptional spectral purity, meeting stringent out-of-band spur requirements (≤-36dBm/30kHz below 1GHz, ≤-30dBm/30kHz up to 12.75GHz). This makes the module particularly suitable for dense 5G deployments where interference mitigation is critical. The 5100-5900MHz amplifier maintains excellent VSWR (≤1.5 at both input and output) through optimized impedance matching networks, protecting against reflected power damage while ensuring maximum power transfer. The compact 125×65×20mm form factor with SMA-KFD connectors allows for flexible integration into various system configurations.

As a 5G power amplifier solution, this module supports both traditional and Open RAN architectures, featuring standardized monitoring interfaces through feed-through capacitors. The DC+28V power supply design with ≤3A operating current ensures compatibility with common telecom power systems. With its combination of high power, broadband performance, and robust thermal protection, this 30W power amplifier is engineered to meet the rigorous demands of 5G network operators and equipment manufacturers, delivering reliable performance in both commercial and industrial applications.

Working frequency 5100-5900MHz
Saturated power output45±1dBm
Gain45±2dB
In-band flatness
Working current≤3A
Input and output VSWR≤1.5
Out-of-band spurs
9kHz~1GHz:≤-36dBm/30kHz
1GHz~12.75GHz:≤-30dBm/30KHz
Maximum lossless input+10dBm
Operating VoltageDC+28V
Power supply interfaceFeed-through capacitor
RF portSMA-KFD
Monitoring interfaceFeed-through capacitor
Amplifier size125*65*20 mm
Operating temperature-10~+55℃
Relative humidity5%~95%,No condensation
Storage temperature-25~+65℃
Current reportThe chips will read the current value by voltage 0-5V. 
Temperature report
The chip reads temperature value by voltage
reference of “VO = 10 mV / °C T °C500 mV
with 25℃ as the basic reference point ”,
the voltage increases 10 mV astemperature 1℃ more