GaN 5100-5900MHz 30W Smart PA Module with Dual Temp and VSWR Protection for 5G
The ZD 5100-5900MHz 30W power amplifier represents a cutting-edge solution for modern 5G power amplifier applications, delivering exceptional performance across the entire C-band spectrum. This broadband PA module features a robust 45±1dBm saturated output (approximately 30W) with outstanding 45±2dB gain, making it ideal for 5G base stations, small cells, and other high-density wireless infrastructure. The amplifier maintains excellent in-band flatness (
Engineered for reliability, this high-performance module incorporates comprehensive thermal protection through an intelligent monitoring system. The precision temperature sensing circuitry provides real-time voltage feedback (10mV/°C) with 25°C as baseline, enabling automatic power adjustment and shutdown protection when necessary. Combined with the efficient milled aluminum housing, this thermal management system allows continuous operation in demanding environments (-10°C to +55°C). The 30W power amplifier design utilizes advanced GaN technology to achieve high efficiency while minimizing heat generation, significantly improving system reliability and lifespan.
The broadband PA architecture demonstrates exceptional spectral purity, meeting stringent out-of-band spur requirements (≤-36dBm/30kHz below 1GHz, ≤-30dBm/30kHz up to 12.75GHz). This makes the module particularly suitable for dense 5G deployments where interference mitigation is critical. The 5100-5900MHz amplifier maintains excellent VSWR (≤1.5 at both input and output) through optimized impedance matching networks, protecting against reflected power damage while ensuring maximum power transfer. The compact 125×65×20mm form factor with SMA-KFD connectors allows for flexible integration into various system configurations.
As a 5G power amplifier solution, this module supports both traditional and Open RAN architectures, featuring standardized monitoring interfaces through feed-through capacitors. The DC+28V power supply design with ≤3A operating current ensures compatibility with common telecom power systems. With its combination of high power, broadband performance, and robust thermal protection, this 30W power amplifier is engineered to meet the rigorous demands of 5G network operators and equipment manufacturers, delivering reliable performance in both commercial and industrial applications.
| Working frequency | 5100-5900MHz |
| Saturated power output | 45±1dBm |
| Gain | 45±2dB |
| In-band flatness | |
| Working current | ≤3A |
| Input and output VSWR | ≤1.5 |
| Out-of-band spurs | 9kHz~1GHz:≤-36dBm/30kHz 1GHz~12.75GHz:≤-30dBm/30KHz |
| Maximum lossless input | +10dBm |
| Operating Voltage | DC+28V |
| Power supply interface | Feed-through capacitor |
| RF port | SMA-KFD |
| Monitoring interface | Feed-through capacitor |
| Amplifier size | 125*65*20 mm |
| Operating temperature | -10~+55℃ |
| Relative humidity | 5%~95%,No condensation |
| Storage temperature | -25~+65℃ |
| Current report | The chips will read the current value by voltage 0-5V. |
| Temperature report | The chip reads temperature value by voltage reference of “VO = 10 mV / °C T °C500 mV with 25℃ as the basic reference point ”, the voltage increases 10 mV astemperature 1℃ more |