800-6000MHz 10/20W GaN Chip-and-Wire Broadband RF Power Amplifier Module

This  800-6000MHz power amplifier is developed with core GaN gallium nitride material and mature chip-and-wire bare chip bonding technology, available with 10/20W saturated output power options. As a high-performance 800-6000MHz power amplifier, it features instantaneous ultra-wide bandwidth. The GaN chip delivers high power density, while the chip-and-wire technology greatly improves power-to-volume ratio. This 10/20W amplifier adopts 50Ω matched input and output impedance, featuring typical 41dB gain and excellent harmonic & spurious suppression. Built-in complete control circuits support over-temperature, over-voltage and over-current multi-protection with automatic shutdown under faults. Compatible with 24–32VDC power supply rated at 28V, it runs steadily in wide temperature conditions. Adopting GaN  and chip-and-wire technology, this 800-6000MHz power amplifier with  10/20W power choices meets diverse output demands, widely used in EMC testing, signal jamming and RF measurement projects.