6-8GHz 50W Saturated RF GaN Broadband Power Amplifier Module

This  6-8GHz GaN power amplifier module is a professional solid-state microwave power component built with advanced GaN chip technology, and it is a high-performance 50W saturated broadband amplifier covering the full 6-8GHz frequency range. The rated saturated output power reaches 50W, with a typical power gain of 47dB and gain flatness controlled within ±2dB. As a reliable 50W saturated broadband amplifier, it features standard 50Ω input and output impedance matching, SMA-K female RF input and N-K female RF output, powered by 28V DC with maximum working current 8A. The 6-8GHz GaN power amplifier module integrates complete protection circuits for over-temperature, over-voltage and over-current, with automatic shutdown at 85°C to avoid device damage. It reserves RS485 communication pins for real-time monitoring of operating status, low harmonic and spurious signal performance up to ≤-12dBc and ≤-60dBc respectively. Compact alloy housing measures 170×94×26.5mm and weighs only 1.5kg, stably operating from -30℃ to +55℃. This 6-8GHz GaN power amplifier module is widely matched with EMC test equipment, RF signal jammers and microwave measurement systems.