6-18GHz 100W Ultra Wideband GAN RF Power Amplifier Module
ZD-PA-6/18G-100W
This is a 6–18GHz 100W GaN solid state power amplifier module with multi-octave ultra-wideband performance. Manufactured with gallium nitride and chip-and-wire technology, it provides typical 100W saturated output power, 50dB power gain and ±1dB gain flatness. It achieves -15dBc harmonic suppression and -60dBc spurious suppression under rated power, with standard 50-ohm input and output impedance. Powered by +28VDC, the module integrates over-temperature and over-current protection to cut off automatically in abnormal conditions. It supports TTL enable control and real-time analog signals for temperature and current alarm. Operating temperature ranges from -20℃ to 50℃. Compact and lightweight (200×160×35mm, 1.5kg), fitted with SMA input, N-type output and D-Sub power connector, it suits EMC testing, signal jamming and test measurement systems.
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This 6-18GHz broadband amplifiers unit is a high-performance GaN solid state power amplifier module with typical saturated output power of 100W. Adopting advanced GaN chip-and-wire manufacturing technology, this 6-18GHz broadband amplifiers delivers stable 100W RF output, 50dB typical power gain and ultra-flat ±1dB gain response across full frequency band. With 50Ω matched input and output ports, it reaches -15dBc harmonic suppression and outstanding -60dBc spurious rejection at full 100W power. Running on +28VDC supply, the 6-18GHz broadband amplifiers integrates complete safety protection: over-temperature and over-current auto-shutdown function. It supports TTL enable switch, with analog output signals for real-time temperature and current fault alert. The GaN amplifier works reliably from -20℃ to 50℃, featuring compact dimension 200×160×35mm and only 1.5kg weight. Equipped with SMA input, N-type RF output and D-Sub power connector, this 100W 6-18GHz broadband amplifiers is widely deployed for EMC testing, signal jamming and precision test & measurement systems.
| Operating Frequency | 6-18GHz |
| RF Output Power @PSAT | 100W |
| Power Gain @PSAT | 50dB |
| Power Gain Flatness @PSAT | ±1dB |
| Input Return Loss | -10dB |
| Harmonics @100W | -15dBc |
| Spurious Signals @PSAT | -60dBc |
| In/Output Impedance | 50Ω |
| Operating Voltage | 28V |
| Quiescent Current | 9A |
| Dynamic Current @100W | 20A |
| Power add efficiency | 20% |
| Input RF drive level without damage | +10 dBm |
| Load VSWR @ POUT =100W | 5:1 @ all load phase & amplitude continuous |
| Thermal Overload | 85℃ ±5℃shutdown |
| Operating Temperature | -20~50℃ |
| Storage Operating Temperature | -25~65℃ |
| Relative Humidity（non-condensing） | 95%% |
| Dimensions | 200x160x35mm |
| Weight | 1.5kg |
| RF Connectors Input | SMA-K, Female |
| RF Connectors Output | N-K, Female |
| DC Interface Connector | Hybrid, 7W2 Mixed Contact D-Sub, Male |
