High Saturation Power 100W 6000‑8000MHz Chip and Wire GaN RF Amplifier Module
ZD-PA-6000/8000M-100W
This wideband rf power unit covers 6000‑8000MHz frequency band and adopts mature chip and wire GaN production craft to reach up to 100W saturated output power. It features over 50dB stable power gain and strict index control on harmonics and spurious signals to guarantee clean RF signal output. The module uses separated SMA female rf input port and N female rf output port with standard 50Ohm impedance matching. Built-in full protection circuit can cut off output automatically when facing over temperature over voltage and over current risks, supporting RS485 serial communication for remote control. With alloy iridite shell and compact 170×94×26.5mm dimension, it weighs only 1.5kg and adapts to wide temperature range from -30℃ to +55℃, widely used in EMC testing and signal jamming equipment.
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ThiswidebandGaN power amplifier module applies mature chip and wire technology, delivering peak 100W saturated output power across full 6000‑8000MHz frequency spectrum. The widebandGaN power amplifier module achieves minimum 50dB gain with ±2dB flatness, low harmonics below -12dBc and spurious signals less than -60dBc under full 100W output, ensuring pure signal performance in the whole 6000‑8000MHz band. Benefiting from reliable chip and wire technology, the GaN power amplifier module adopts separate SMA female input and N female output with standard 50Ω matching. Powered by 24–32V DC 28V nominal supply, it integrates over-temperature over-voltage over-current auto-shutdown protection and RS485 serial communication. With alloy iridite casing and 170×94×26.5mm compact size at 1.5kg weight, this wideband power unit operates stably from -30℃ to +55℃, perfectly matching EMC measurement and signal jamming system integration.
| WorkingFrequency | 6000-8000MHz |
| Saturated Output Power | ≥100W |
| Saturated Output PowerGain | ≥50dB |
| PowerGainFlatness | 50±2dB |
| Input Return Loss | ≤-10dB |
| Harmonics @100W | ≤-12dBc |
| Spurious Signals @PSAT | ≤-60dBc |
| In/Output Impedance | 50Ω |
| Operating Voltage | DC+28V |
| DC Current @100W | 8A |
| Input RF DriveLevel without Damage | ≤+10dBm |
| Signal Source | without |
| Load VSWR @ POUT =100W | 3:1 @ all load phase & amplitude continuous |
| RF Input | SMA-K, Female |
| RF Output | N-K, Female |
| Power Supply Connector | Hybrid, D-Sub7W2, Male |
| Dimensions | 170mm*94mm*26.5mm |
| Weight | 1.5kg |
| Finishing | Alloy iridite |
| OperatingTemperature | -30～+55℃ |
| RelativeHumidity | 5%～95%，No condensation |
| StorageTemperature | -40～+65℃ |
| Thermal Overload | 85°C ±5°C shutdown |
