Chip and Wire Technology Realized High Power 1000‑6000MHz 50W GaN RF Amplifier Module

Adopting advanced chip and wire manufacturing technology, this high‑performance rf module delivers stable 50W saturated output power across 1000‑6000MHz multi‑octave bandwidth. Thanks to chip and wire process, this rf module achieves outstanding power‑to‑volume ratio with compact mechanical size of 150×90×25 mm and weight only 0.5 kg, convenient for system cabinet integration. Working under +28 VDC power supply, the 50Wrf module offers typical 47 dB gain and 35 % power added efficiency over full 1000‑6000MHz frequency range. Both input and output ports are 50‑Ohm matched with SMA female connectors. Built‑in comprehensive protection circuits realize automatic shutdown for over‑temperature over‑voltage and over‑current faults. RS485 serial port enables remote monitoring and control. Designed for EMC test measurement and signal jamming applications, this rf module reliably operates from ‑20℃ to 50℃ and supports continuous work in various industrial and laboratory environments.