High Performance 2200-2700MHz Signals Gan Transistor 200W Power Amplifier Module
The 200W power amplifier incorporates advanced protection mechanisms to ensure reliable operation in demanding environments, including automatic overheating protection that activates at ≥90°C and resets only when temperatures fall below 65°C. This signal amplifier also features comprehensive fault detection systems, such as open-circuit protection triggered when VSWR exceeds 2.5dB, providing an additional layer of security for connected equipment. Despite its high power output, the compact amplifier maintains excellent voltage standing wave ratio performance (≤1.6 VSWR) across its operating band, ensuring efficient energy transfer while minimizing signal reflections. The unit's 32V DC power supply with ≤20A current draw at full power demonstrates its efficient design, making this 200W power amplifier suitable for both fixed installations and mobile platforms where power consumption is a consideration. Flexibility is a key advantage of this signal amplifier, which features configurable SMA and N-type RF ports along with M4.0 feedthrough capacitor power input for secure connections. The compact amplifier supports remote monitoring and control through its RS485 interface, enabling real-time adjustment of operational parameters and providing detailed system telemetry including temperature readings with ≤3°C accuracy and downlink power detection across a ≥20dB dynamic range. These capabilities make the 200W power amplifier particularly valuable for automated systems requiring precise performance feedback and remote management. The inclusion of M2.5 through-core switching allows for convenient activation using a 2.5V high-level signal, while the 4-pin communication port facilitates integration with broader control systems, enhancing the signal amplifier's versatility in complex RF architectures.
Engineered for professional applications including cellular infrastructure, military communications, and radar systems, this compact amplifier combines raw power with intelligent features in a surprisingly space-efficient package. The 200W power amplifier's aluminum chassis provides both electromagnetic shielding and structural integrity, while its M4 mounting holes facilitate secure installation in various orientations. With its combination of robust protection systems, clean signal amplification, and adaptable control interfaces, this signal amplifier represents a versatile solution for engineers who need reliable high-power amplification without compromising on signal quality or system integration capabilities. The compact amplifier maintains full functionality across an impressive -40°C to +55°C temperature range, ensuring consistent performance whether deployed in extreme cold or intense heat, making it equally suitable for arctic research stations or desert communication outposts.
What sets this 200W power amplifier apart is its ability to deliver laboratory-grade performance in field-deployable packaging. The signal amplifier's sophisticated design ensures stable operation even in challenging environmental conditions, with automatic restart capability after fault conditions are resolved further enhancing its reliability for unattended operation in remote locations. As a compact amplifier, it achieves remarkable power density without sacrificing performance or protection features, making it ideal for space-constrained applications where every millimeter counts. Whether used as a standalone unit or integrated into a larger RF system, this 200W power amplifier provides the perfect balance of power, precision, and protection, representing the next evolution in high-power RF amplification technology for professional wireless communication systems where reliability and performance cannot be compromised.
Item name | Technical parameters | Remarks |
Frequency band (MHz) | 2200-2700 | |
Max. output power (dBm) | ≧53 | |
Max. gain(dB) | 53±1.5 | customizable |
In-band fluctuation(peak-to-peak) (dB) | ≤1.5 | |
Spurious emissions | 9kHz~1GHz≤-36dBm | RBW= 100kHz |
1GHz~12.75GHz≤-30dBm | RBW= 1MHz (excludingSEM test band) | |
VSWR | ≤1.6 | |
Supply voltage(V) | 32V | |
Working current (A) | ≤20A@full power | |
Working temperature(℃) | -40~+55 | |
Power supply interface | M4.0 feedthroughcapacitor | |
RF port | ANT IN ->ANT input port:SMAANT OUT->ANT outputport: N | customizable |
Switch control | M2.5 through-corecapacitor: high level turnson; low level turns off | The high level voltage is2.5V |
Output open circuit alarm | M2.5 feedthroughcapacitor: high level open circuit alarm | |
Communication monitoring | 1*4Pin 2.5 pitchPin 1: A;Pin 2: GND ground;Pin 3:B;Pin 4: NC; | |
Temperature detectionerror | ≤3℃ | |
Downlink output powerdetection | ≥20dB,(P0+2-P0-18) | |
Open circuit protection | VSWR>2.5 dB,PA switchoff, f, the indicator light willalarm, and restart torecover | automatic |
Overheating protection | ≥90°C switch on, ≤65°Cswitch off | automatic |
embedded software environmen | Fully connected to RS485;ability to control actualtemperature, outflow rate, descending road declinecontrol | |
Material | aluminum | |
Size(mm) | L220*W118*H27 | reference |
Installation fixed holespacing size | M4 |