200W 10-13GHz GaN High Gain Broadband Chip-and-Wire Power Amplifier Module

This  10-13GHz SSPA is manufactured with GaN gallium nitride material and chip-and-wire bare chip bonding technology, providing saturated output power up to 200W with superior power density and excellent power-to-volume ratio. This 10-13GHz amplifier adopts 50-ohm matched input and output ports, featuring typical 53dB gain and ±1dB gain flatness, along with outstanding harmonic and spurious suppression performance. Benefiting from GaN material and mature chip-and-wire technology, this 200W  SSPA is compact and lightweight. It comes with full built-in control circuits and dual protection against over-temperature and over-current, which automatically shuts down the unit to prevent damage under abnormal status. Running on standard 28VDC power supply, it works stably from -20℃ to 50℃, equipped with SMA female input and WR75 flange RF output. As a high-performance 10-13GHz  SSPA, it delivers stable high 200W output powered by GaN and  chip-and-wire  technology, widely used in signal jamming, EMC testing, RF measurement and other microwave engineering applications.