RF Wide Band 100-6000Mhz 100W Power Amplifier Module
TheRF wide band 100-6000Mhz 100Wpower amplifier moduleengineered for general-purpose applications, offering an exceptionally wide operating frequency range of 100-6000MHz. This broad spectrum makes it highly versatile and adaptable to a variety of operational environments. Thehigh poweramplifier employs Class AB Gallium Nitride (GaN) technology on a Silicon Carbide (SiC) substrate, which provides superior performance, efficiency, and reliability. The GaN design ensures high power density and minimizes thermal issues, making it ideal for demanding applications.
One of the standout features of thepower amplifier module is its instantaneous wide bandwidth. This capability allows the amplifier module to handle a broad range of frequencies without any performance degradation, which is particularly beneficial in applications that require rapid frequency changes. Additionally, the high power amplifier features 50 Ohm input and output impedance, ensuring seamless integration with standard RF systems and eliminating the need for additional matching networks.
The RF Amplifier Module is also notable for its small size and lightweight design, making it easy to integrate into various systems without adding significant bulk or weight. Despite its compact form, the rf power amplifier module is built with high-quality components and a robust design, ensuring high reliability and ruggedness. It is capable of withstanding demanding operational conditions, making it a reliable choice for a wide range of applications, including telecommunications, radar systems, electronic warfare, test and measurement equipment, and industrial and commercial RF systems.
The RF Amplifier Module is enhanced by patented technology, with the GaN substrate attached to a copper subcarrier. This innovative design optimizes heat dissipation, reducing the risk of overheating and extending the lifespan of the device. Overall, therf power amplifier modulecombines advanced GaN technology with innovative thermal management, making it an ideal choice for any application requiring high-performance amplification across a wide frequency range. Its reliability, ruggedness, and compact design ensure consistent performance in even the most demanding environments.
Item name | Technical parameters |
working frequency | 100-500/500-2700/2700-6000MHz |
Saturated power output | 50±1dBm |
Gain | 50±2dB |
In-band flatness | |
Working current | ≤10A |
Input and output VSWR | ≤1.5 |
Out-of-band spurs | 9kHz~1GHz:≤-36dBm/30kHz1GHz~12.75GHz:≤-30dBm/30KHz |
Maximum lossless | dBm |
Operating Voltage | DC+28V |
Power supply interface | 2W2 |
RF port | N |
Monitoring interface | DB9: 1:TEMP, 3:VSWR |
Operating temperature | -10~+55℃ |
Relative humidity | 5%~95%,No condensation |
Storage temperature | -25~+65℃ |