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Continuous Wave

0.02-6G GaN HEMT 300W CW High Power Amplifier

ZD-SSPA-0.02/6G-300W
This 0.02-6G GaN HEMT High Power Amplifier (SSPA) delivers 55dBm (300W) output power, supports CW operation mode with efficiency over 25% and input VSWR 1.5:1. Equipped with SMA-KFD50 input, N-KFD50 output, powered by +28V, operating temperature -20~+55℃, requiring cold plate contact heat dissipation, ideal for multi-band RF applications.
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This product is a high power amplifier (SSPA) built with GaN HEMT devices, covering multiple frequency bands of 0.02-6GHz:0.02-0.5G, 0.5-3G, 3-6G, with output power up to 55dBm (300W) and supporting continuous wave (CW) operation mode, meeting the requirements of TTL high-level startup and normal operation. It boasts outstanding performance: efficiency over 25%, spurious level as low as 55dBc, input power adapted to 0±2dBm, and input VSWR only 1.5:1, ensuring stable and reliable signal transmission. Equipped with professional interfaces: SMA-KFD50 connector for input, N-KFD50 connector for output, powered by +28V, operating temperature range -20~+55℃, suitable for various complex environments. The product needs to be installed on a cold plate for contact heat dissipation to ensure long-term stable operation, widely used in radio frequency communication, radar systems, test and measurement and other multi-field and multi-band application scenarios, providing an efficient solution for high-power radio frequency needs.

GaN CW High Power Amplifier

Raw

Parameter

Value

unit

Comments

1

Frequency range

0.02-0.5G,0.5-3G,3-6G

GHz

2

Output Power

55

dBm

3

Working Mode

CW

TTL

4

Spurious Level

55

dBc

5

Input Power

0±2

dBm

6

Efficiency

>25

%

7

Input VSWR

1.5:1

-

8

input Connector

SMA-KFD50

-

9

Output Connector

N-KFD50

-

10

Temp Range

-20~+55

degree

11

Supply

+28

V