0.02-6G GaN HEMT 300W CW High Power Amplifier
ZD-SSPA-0.02/6G-300W
This 0.02-6G GaN HEMT High Power Amplifier (SSPA) delivers 55dBm (300W) output power, supports CW operation mode with efficiency over 25% and input VSWR 1.5:1. Equipped with SMA-KFD50 input, N-KFD50 output, powered by +28V, operating temperature -20~+55℃, requiring cold plate contact heat dissipation, ideal for multi-band RF applications.
Quantity:
This product is a high power amplifier (SSPA) built with GaN HEMT devices, covering multiple frequency bands of 0.02-6GHz:0.02-0.5G, 0.5-3G, 3-6G, with output power up to 55dBm (300W) and supporting continuous wave (CW) operation mode, meeting the requirements of TTL high-level startup and normal operation. It boasts outstanding performance: efficiency over 25%, spurious level as low as 55dBc, input power adapted to 0±2dBm, and input VSWR only 1.5:1, ensuring stable and reliable signal transmission. Equipped with professional interfaces: SMA-KFD50 connector for input, N-KFD50 connector for output, powered by +28V, operating temperature range -20~+55℃, suitable for various complex environments. The product needs to be installed on a cold plate for contact heat dissipation to ensure long-term stable operation, widely used in radio frequency communication, radar systems, test and measurement and other multi-field and multi-band application scenarios, providing an efficient solution for high-power radio frequency needs.
GaN CW High Power Amplifier | ||||||||
Raw | Parameter | Value | unit | Comments | ||||
1 | Frequency range | 0.02-0.5G,0.5-3G,3-6G | GHz | |||||
2 | Output Power | 55 | dBm | |||||
3 | Working Mode | CW | TTL | |||||
4 | Spurious Level | 55 | dBc | |||||
5 | Input Power | 0±2 | dBm | |||||
6 | Efficiency | >25 | % | |||||
7 | Input VSWR | 1.5:1 | - | |||||
8 | input Connector | SMA-KFD50 | - | |||||
9 | Output Connector | N-KFD50 | - | |||||
10 | Temp Range | -20~+55 | degree | |||||
11 | Supply | +28 | V | |||||