800-900MHz 100W power amplifier for rf system amplification
ZD-PA800-900M-50/50G1
This RF Power Amplifier is designed for 851-894MHz/925-960MHz frequency bands, delivering ≥50dBm (100W) saturated output power and 50±2dB high gain, with in-band fluctuation ≤2.0dB and input VSWR ≤1.5 for stable performance. Powered by DC+28V, it features built-in temperature/VSWR alarm and power amplifier on/off control interfaces, supporting -10~+55℃ wide temperature operation. With excellent spurious suppression from 9kHz to 12.75GHz, it meets industrial-grade requirements. Equipped with SMA-KFD input and N-F output ports, the compact design (200×90×24mm) makes it ideal for professional scenarios like wireless communication, signal boosting and RF testing, serving as a reliable core component for RF system construction.
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This100w power amplifieris an industrial-grade RF amplification core designed for 851-894MHz/925-960MHz frequency bands. As a high-performancevhf power amplifier 100w, it delivers ≥50dBm (100W) saturated output power and 50±2dB high gain, providing powerful drive for wireless communication systems. This100w amplifierfeatures in-band fluctuation ≤2.0dB, input VSWR ≤1.5, and gain temperature stability ≤±1.5dB, ensuring accurate and stable signal amplification. The100w power amplifieris equipped with excellent spurious suppression from 9kHz to 12.75GHz, built-in temperature/VSWR alarms and power amplifier switch interfaces, powered by DC+28V with operating current ≤9.5A, and operates stably at -10~+55℃ wide temperature. Thevhf power amplifier 100wadopts SMA-KFD input and N-F output ports, with a compact 200×90×24mm design that balances installation and heat dissipation. It is a highly reliable choice for100w amplifierin signal boosting, RF testing, system integration and other scenarios. The100w power amplifiermeets industrial-grade stringent requirements and is the preferred100w amplifierfor RF system construction.
| Item name | Technical parameters |
| Working frequency | 851-894MHz；925-960MHz； |
| Saturated output power | ≥50dBm |
| Gain | 50±2dB |
| In-band fluctuation | ≤2.0dB |
Out-of-band spurious | 9kHz～1GHz：≤-36dBm/30kHz 1GHz～12.75GHz：≤-30dBm/30KHz |
| Input VSWR | ≤1.5 |
| Gain temperature stability | ≤±1.5dB |
| Maximum lossless input power | +10dBm |
| Working voltage | DC+28V |
| Working current | ≤9.5A |
Power supply monitoring interface | adopts 7W2 male socket: A1 connects to GND; A2 connects to +28V； Pin 1 power amplifier is enabled, high level turns on the power amplifier, low level turns off the power amplifier, the factory default low level; 2,5 feet are grounded; 3-pin temperature alarm, the power amplifier temperature is higher than +85℃, output high-level alarm; 4-pin standing wave ratio alarm, when the output terminal of the power amplifier is disconnected, a high level alarm will be output; |
| Input RF port | SMA-KFD |
| Output RF port | N-F |
| Dimensions | 200×90×24mm |
| Working temperature | -10～+55℃ |
