50W GaN RF Power Amplifier Module 1500-2500MHz 48dB Gain 30V DC
ZD-PAD-1500/2500M-50W
The ZD-PAD-1500/2500-50W is a versatile RF power amplifier designed for broad applications across the 1500-2500MHz frequency range. Utilizing advanced Gallium Nitride on Silicon Carbide (GaN-on-SiC) technology mounted on a copper subcarrier, this compact unit delivers efficient 50W performance with excellent thermal management through patented cooling techniques. Its Class AB design ensures optimal linearity while maintaining wide instantaneous bandwidth capabilities, making it suitable for both continuous wave and complex modulation schemes. The amplifier features standard 50 Ohm input/output impedance for seamless system integration and demonstrates high reliability in demanding environments. With its lightweight construction and rugged design, this general-purpose amplifier balances power, efficiency, and durability, ideal for communications, radar, and test equipment applications where consistent performance and thermal stability are critical. The innovative thermal handling solution allows for extended operation without performance degradation, while the GaN technology provides superior power density compared to traditional semiconductor alternatives.
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This advanced gan amplifier delivers superior RF performance across the 1500-2500mhz band, setting new standards for broadband power amplification. The 50w amplifier utilizes cutting-edge gallium nitride technology to achieve exceptional 25% efficiency while maintaining outstanding signal purity, with harmonic distortion below -10dBc and spurious emissions suppressed to -60dBc. This rf power module stands out with its remarkable 1000MHz instantaneous bandwidth capability, providing engineers with unparalleled flexibility for modern wideband applications.
The broadband pa features a stable 48±3dB gain profile with excellent ±3dB flatness across its entire operating range, ensuring consistent performance whether amplifying simple CW signals or complex modulated waveforms. Designed as a rugged rf power module, it operates reliably under demanding environmental conditions while drawing just 6.5A current at 40W output from its 28-30V DC supply. The gan amplifier's innovative thermal design maintains optimal performance even at elevated 50℃ baseplate temperatures.
What distinguishes this 50w amplifier is its exceptional combination of wide bandwidth and high linearity. The broadband pa maintains ≤2:1 VSWR at both input and output ports throughout the 1500-2500mhz spectrum, minimizing impedance matching challenges. Its robust construction incorporates multiple protection features, including safe operation with input signals up to 5dBm without damage risk. The rf power module excels in specialized applications requiring both power and precision. Its gallium nitride core enables faster switching speeds and better thermal conductivity than conventional technologies, making this gan amplifier particularly suitable for pulsed radar systems and advanced communication protocols. The 50w amplifier delivers laboratory-grade performance in field-ready packaging, with consistent characteristics across its full 1500-2500mhz operating range.
For system integrators, this broadband pa offers significant advantages. The rf power module eliminates the need for multiple narrowband amplifiers while providing superior spectral purity. Its gallium nitride implementation results in a more compact, energy-efficient solution compared to traditional 50w amplifier designs, without compromising reliability or performance. The gan amplifier's combination of wide instantaneous bandwidth, high efficiency and excellent linearity makes it invaluable for next-generation wireless systems. Whether deployed in test equipment, communication infrastructure or specialized RF systems, this broadband pa delivers consistent, high-fidelity amplification throughout the 1500-2500mhz spectrum.
| PARAMETER | UNIT | MIN | TYP | MAX | SYMBOL |
| operating Frequency | MHz | 1500 | - | 2500 | Fo |
| Operating Bandwidth | MHz | - | 1000 | - | BW |
| Peak Output Power @CW Signal | W | - | 50 | - | PSAT |
| Input Power | dBm | - | -2±3 | - | PIN |
| Maximum Input Power @Without Damage | dBm | - | - | 5 | PIN, MAX |
| Power Gain @Input Power 0dBm | dB | - | 48±3 | - | GP |
| Gain Flatness @Input Power 0dBm | dB | - | - | ±3 | ∆GP |
| Efficiency | % | - | 25 | - | EFF |
| Harmonics 1 to N@Output Power 40W | dBc | 10 | - | - | HN |
| Spurious Level | dBc | 60 | - | - | Spur |
| Input VSWR | dB | - | - | 2:1 | VSWR |
| Output VSWR | dB | - | - | 2:1 | VSWR |
| Operating Voltage | V | -- | 28-30 | - | VDC |
| Current Consumption @Output Power 40W | A | - | 6.5 | - | IDC |
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