0
image
image
image
image
best GaN amplifier

High Reliability 200W 53dB GaN Power Amplifier 900-1300 MHz Frequency Range Module

ZD-PA-900/1300M-200W
The ZD-PA-900/1300M-200W is designed for general purpose. Contains gallium nitride transistor that work in conjunction with other circuit components to achieve stable and reliable power output.

Product Feature
· Frequency from 900-1300MHz
· Enable control switch
· Class AB GaN design
· VSWR and temperature alarm
· 200W High power
· Instantaneous wide bandwidth
· 50 Ohm Input/Output impedance
Quantity:
Contact Now
add to cart
This is an advanced GaN power amplifier that operates stably in the 900-1300MHz frequency band, showing extraordinary strength and being a strong contender for the best GaN amplifier.
As an amplifier 200w, its maximum output power is ≥53dBm, the maximum gain can reach 53±1.5dB, and the gain is customizable to meet the needs of different application scenarios. The peak-to-peak fluctuation within the band is ≤1.5dB, ensuring the stability and accuracy of signal transmission.
In terms of signal purity, spurious emissions are strictly controlled within 9kHz-1GHz≤-36dBm (resolution bandwidth 100kHz) and 1GHz-12.75GHz≤-30dBm (resolution bandwidth 1MHz, excluding electromagnetic interference test band), effectively reducing interference and ensuring communication quality. The voltage standing wave ratio is ≤1.6, reducing signal reflection and improving transmission efficiency.
The supply voltage is 32V, the full power working current is ≤20A, and it can work stably in a wide temperature environment of -40℃ - +55℃, and adapt to a variety of complex environments. Gallium nitride materials give it advantages such as high efficiency and high reliability. Compared with traditional amplifiers, it has higher power density and efficiency, which can effectively reduce energy consumption and reduce heat.
Whether in communication base stations, radar systems, or wireless communication equipment, this GaN power amplifier provides reliable solutions for signal amplification needs with its excellent performance parameters, stable working performance and advanced material advantages. It is an ideal choice for users who pursue high performance and high stability.

Item name

Technical parameters

Remarks

Frequency band (MHz)

900-1300

Max. output power (dBm)

≧53

Max. gain(dB)

53±1.5

customizable

In-band fluctuation(peak-to-peak) (dB)

≤1.5

Spurious emissions

9kHz～1GHz≤-36dBm

RBW= 100kHz

1GHz～12.75GHz≤-30dBm

RBW= 1MHz (excludingSEM test band)

VSWR

≤1.6

Supply voltage(V)

32V

Working current (A)

≤20A@full power

Working temperature（℃）

-40~+55

Power supply interface

M4.0 feedthroughcapacitor

RF port

ANT IN ->ANT input port:SMAANT OUT->ANT outputport: N

customizable

Switch control

M2.5 through-corecapacitor: high level turnson; low level turns off

The high level voltage is2.5V

Output open circuit alarm

M2.5 feedthroughcapacitor: high level open circuit alarm

Communication monitoring

1*4Pin 2.5 pitchPin 1: A;Pin 2: GND ground;Pin 3:B;Pin 4: NC;

Temperature detectionerror

≤3℃

Downlink output powerdetection

≥20dB,(P0+2－P0-18)

Open circuit protection

VSWR＞2.5 dB，PA switchoff, f, the indicator light willalarm, and restart torecover

automatic

Overheating protection

≥90°C switch on, ≤65°Cswitch off

automatic

embedded software environmen

Fully connected to RS485;ability to control actualtemperature, outflow rate, descending road declinecontrol

Material

aluminum

Size(mm)

L220*W118*H27

reference

Installation fixed holespacing size

M4