0
image
image
image
image
200W amplifier

Frequency Range 1300-1800MHz 200W Amplifier GaN RF Power Module

ZD-PA-1300/1800M-200W
The ZD-PA-1300/1800M-200W is designed for general purpose. Contains gallium nitride transistor that work in conjunction with other circuit components to achieve stable and reliable power output.
Product Feature:
· Frequency from 1300/1800MHz
· Instantaneous wide bandwidth
· 50 Ohm Input/Output impedance
· Class AB GaN design
· Enable control switch
· 200W High power
· VSWR and temperature alarm
Quantity:
Contact Now
add to cart
Our RF power amplifier is an outstanding 200W amplifier. It works stably in the frequency band of 1300 - 1800MHz, and as a vhf amplifier 200w, it shows excellent performance.
 
The maximum output power is ≥53dBm, the maximum gain can reach 53±1.5dB, and the gain can be customized. The peak-to-peak fluctuation in the band is ≤1.5dB, which can ensure stable signal transmission. Spurious emissions are strictly controlled in different frequency bands 9kHz - 1GHz≤ - 36dBm, 1GHz - 12.75GHz≤ - 30dBm, and the voltage standing wave ratio is ≤1.6, which effectively reduces signal reflection.
 
The power supply voltage is 32V, the full power working current is ≤20A, and it can operate stably in an environment of -40℃ - +55℃. The power interface uses M4.0 through-hole capacitors, and the RF port includes SMA input and N-type output, which can be customized. The switch control is realized by M2.5 through-hole capacitor, high level turns on, low level turns off, and the high level voltage is 2.5V. It has output open circuit alarm, open circuit protection, automatic shutdown and alarm when VSWR＞2.5dB, restart recovery, overheat protection turns on at 90℃, and turns off at 55℃, etc., to ensure the safety and reliability of the equipment.
 
It also integrates functions such as temperature detection and downstream output power detection. The embedded software environment can fully control temperature, flow, drop rate, etc. through RS485. It is made of aluminum, with dimensions of L220*W118*H27mm and mounting hole spacing of M4. Whether it is a 200w 2 channel amplifier or a best 200w amplifier, it has become an ideal choice in the fields of communication, radar, etc. with its excellent performance and rich functions.

Item name

Technical parameters

Remarks

Frequency band (MHz)

1300-1800

Max. output power (dBm)

≧53

Max. gain(dB)

53±1.5

customizable

In-band fluctuation(peak-to-peak) (dB)

≤1.5

Spurious emissions

9kHz～1GHz≤-36dBm

RBW= 100kHz

1GHz～12.75GHz≤-30dBm

RBW= 1MHz (excludingSEM test band)

VSWR

≤1.6

Supply voltage(V)

32V

Working current (A)

≤20A@full power

Working temperature（℃）

-40~+55

Power supply interface

M4.0 feedthroughcapacitor

RF port

ANT IN ->ANT input port:SMAANT OUT->ANT outputport: N

customizable

Switch control

M2.5 through-corecapacitor: high level turnson; low level turns off

The high level voltage is2.5V

Output open circuit alarm

M2.5 feedthroughcapacitor: high level open circuit alarm

Communication monitoring

1*4Pin 2.5 pitchPin 1: A;Pin 2: GND ground;Pin 3:B;Pin 4: NC;

Temperature detectionerror

≤3℃

Downlink output powerdetection

≥20dB,(P0+2－P0-18)

Open circuit protection

VSWR＞2.5 dB，PA switchoff, f, the indicator light willalarm, and restart torecover

automatic

Overheating protection

≥90°C switch on, ≤65°Cswitch off

automatic

embedded software environmen

Fully connected to RS485;ability to control actualtemperature, outflow rate, descending road declinecontrol

Material

aluminum

Size(mm)

L220*W118*H27

reference

Installation fixed holespacing size

M4