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Broadband 500-6000MHz 100W GaN Power Amplifier Module High Gain Amplifier SSPA

ZD-PA-0.5/6G-100W
The ZD-PA-0.5/66-100W is a 0.5-6GHz 100W solid-state power amplifier module (SSPA) featuring state-of-art GaN technology, delivering 51dB high gain and ±2.5dB flatness. Ideal for 5G base stations, EMC testing, radar, and communication systems, it handles CW, pulse, and high-order modulated signals. With triple protection (overheat/current/VSWR) and IP67 rating, it operates at 32V supply with 550W power consumption. Compact 276×206.5×100mm design with forced-air cooling ensures reliability in -10℃~+55℃ environments.
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The ZD-PA-0.5/6G-100W is a broadband power amplifier module (SSPA) engineered for high-frequency, high-power applications across an unprecedented 0.5-6GHz spectrum. Delivering 51dBm saturated output power (≈126W) with state-of-art GaN technology. It is high gain amplifier which achieves 51dB typical gain and ±2.5dB flatness, making it ideal for 5G NR, LTE, WiFi 6E, and emerging wireless standards.

Key Advantages

  • Broadband Excellence: Harmonic suppression

  • Multi-Signal Compatibility: Handles CW, pulsed, wideband instantaneous, and high-order modulated signals (QAM/OFDM) for EMC testing, radar simulation, and R&D.

  • Rugged Design: Triple protection (thermal/current/VSWR ≤3:1), IP67-rated enclosure, operational from -10℃~+55℃.

Electrical & Mechanical
Powered by 32V DC (550W typ. consumption @ 0dBm input), this sspa integrates current/temperature sensors (100mV/A & 10mV/℃ analog output) and TTL enable control. RF ports feature SMA-F (input) and N-F (output), while power/control use D-Sub 7W2. The compact 276×206.5×100mm alloy chassis (≤6kg) with forced-air cooling ensures sustained full-power operation.

Typical Applications

  • 5G Base Stations: Enhances sub-6GHz coverage with high linearity.

  • EMC Compliance Testing: Drives radiated immunity antennas per IEC/EN 61000-4-3.

  • Defense & Radar: Amplifies L/S/C-band pulsed signals for EW scenarios.

Compact 276×206.5×100mm form factor integrates into ATE systems via standard 19"racks. RF I/O: SMA-F (input), N-F (output). Complies with MIL-STD-810G temperature (-40℃~+75℃ storage).

Frequency range

0.5-6GHz

Saturated Output Power

dBm

Typ./Min.

51/49@ Pin=0dBm

 P1dB

dBm

Typ./Min.

47/44

Gain

dB

Typ./Min.

51/49@ Pin=0dBm

Gain Flatness

dB

Typ.

±2.5@ Pin=0dBm

Small Signal Gain

A

Typ.

64@ Pin=-40dBm

Small Signal Gain Flatness

:1

Typ.

±3.5@ Pin=-40dBm

Isolation@ Disable Status

Typ.

90

Input Power

dBm

Typ.

0

2nd Harmonic Suppression

dBc

Typ./Max.

-20/-15@ Pout=45dBm

3rd Harmonic Suppression

dBc

Typ./Max.

-25/-20@ Pout=45dBm

Spurious Suppression

dBc

Typ./Max.

-70/-65@ Pout=45dBm

Input VSWR

:1

Typ./Max.

1.5/2

Supply Voltage

V

Typ.

32

Power Consumption

W

Typ./Max.

550@ Pin=0dBm

Input Power

Pin≤10dBm (Input RF level without damage)

Load VSWR

VSWR≤3:1 (The power amplifier is undamaged)

Thermal Degradation

75℃

RF Connector

Input: SMA [F]; Output:TYPE N [F]

Power supply Connector

D-Sub 7W2

Control Connector

D-Sub 7W2

Dimension

mm

276.0x206.5x100.0 (LxWxH) (tolerance: ±0.5)

Weight

g

Max.

6000

Finishing

Alloy iridite

Temperature

Operating: -10℃~+55℃; Storage: -40℃+75℃

Heat Dissipation

Unit is cooled by air-forced condition

Waterproof Drade

IP67

Environmental

N/A