50W/80W Customized Wide Band 2500-6000MHz Power Amplifier Module
The 50W80W customized wide band 2500-6000MHzpower amplifier moduledesigned to meet the demands of general-purpose applications, with an operating frequency range of 2500-6000MHz. This broad frequency spectrum makes it highly adaptable to different operational environments. Thehigh power amplifierutilizes Class AB Gallium Nitride (GaN) technology on a Silicon Carbide (SiC) substrate, which is attached to a copper subcarrier to enhance thermal management through patented technology.
One of the primary advantages of therf power amplifier is its instantaneous wide bandwidth capability, enabling it to handle a wide range of frequencies without any performance degradation. This feature is crucial for applications that require rapid frequency changes. Additionally, theamplifier modules' 50 Ohm input and output impedance ensures seamless integration with standard RF systems, reducing the need for additional matching networks.
The( jamming module) is characterized by its small size and lightweight design, which does not compromise its performance or reliability. Built with high-quality components and a robust design, thishigh power amplifier is highly reliable and rugged, capable of withstanding demanding operational conditions. It is an excellent choice for various applications, including telecommunications, radar systems, electronic warfare, test and measurement equipment, and industrial and commercial RF systems.
The thermal management of the amplifier modulesare optimized through patented technology, with the GaN substrate attached to a copper subcarrier. This design ensures effective heat dissipation, reducing the risk of overheating and extending the device's lifespan. Overall, thepower amplifier module combines advanced GaN technology with innovative thermal management, making it an ideal solution for high-performance amplification needs across a wide frequency range. Its reliability, ruggedness, and compact design ensure consistent performance in even the most demanding environments.
Item name | Technical parameters |
working frequency | 2500-6000MHz |
Saturated power output | 47±1/49±1dBm |
Gain | 47±2/49±2dB |
In-band flatness | |
Working current | ≤10A |
Input and output VSWR | ≤1.5 |
Out-of-band spurs | 9kHz~1GHz:≤-36dBm/30kHz1GHz~12.75GHz:≤-30dBm/30KHz |
Maximum lossless | dBm |
Operating Voltage | DC+28V |
Power supply interface | 2W2 |
RF port | SMA |
Monitoring interface | DB9: 1:TEMP, 3:VSWR |
Operating temperature | -10~+55℃ |
Relative humidity | 5%~95%,No condensation |
Storage temperature | -25~+65℃ |