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 power amplifier

50W/80W Customized Wide Band 2500-6000MHz Power Amplifier Module

ZD-PA-2500/6000M-50/80W
The 50W80W customized wide band 2500-6000MHz power amplifier module offers unparalleled performance and versatility, operating from 2500 to 6000MHz. With Class AB GaN technology on a SiC substrate and a copper subcarrier, it ensures enhanced thermal handling. Featuring instantaneous wide bandwidth and 50 Ohm input/output impedance, this high power amplifier is compact, lightweight, and highly reliable. It is designed to meet the needs of various applications, including telecommunications and industrial RF systems, with its superior efficiency and rugged design.
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The 50W80W customized wide band 2500-6000MHzpower amplifier moduledesigned to meet the demands of general-purpose applications, with an operating frequency range of 2500-6000MHz. This broad frequency spectrum makes it highly adaptable to different operational environments. Thehigh power amplifierutilizes Class AB Gallium Nitride (GaN) technology on a Silicon Carbide (SiC) substrate, which is attached to a copper subcarrier to enhance thermal management through patented technology.

One of the primary advantages of therf power amplifier is its instantaneous wide bandwidth capability, enabling it to handle a wide range of frequencies without any performance degradation. This feature is crucial for applications that require rapid frequency changes. Additionally, theamplifier modules' 50 Ohm input and output impedance ensures seamless integration with standard RF systems, reducing the need for additional matching networks.

The( jamming module) is characterized by its small size and lightweight design, which does not compromise its performance or reliability. Built with high-quality components and a robust design, thishigh power amplifier is highly reliable and rugged, capable of withstanding demanding operational conditions. It is an excellent choice for various applications, including telecommunications, radar systems, electronic warfare, test and measurement equipment, and industrial and commercial RF systems.

The thermal management of the amplifier modulesare optimized through patented technology, with the GaN substrate attached to a copper subcarrier. This design ensures effective heat dissipation, reducing the risk of overheating and extending the device's lifespan. Overall, thepower amplifier module combines advanced GaN technology with innovative thermal management, making it an ideal solution for high-performance amplification needs across a wide frequency range. Its reliability, ruggedness, and compact design ensure consistent performance in even the most demanding environments.

Item name

Technical parameters

working frequency

2500-6000MHz

Saturated power output

47±1/49±1dBm

Gain

47±2/49±2dB

In-band flatness

Working current

≤10A

Input and output VSWR

≤1.5

Out-of-band spurs

9kHz1GHz≤-36dBm/30kHz1GHz12.75GHz≤-30dBm/30KHz

Maximum lossless

dBm

Operating Voltage

DC+28V

Power supply interface

2W2

RF port

SMA

Monitoring interface

DB9: 1:TEMP, 3:VSWR

Operating temperature

-10+55℃

Relative humidity

5%95%No condensation

Storage temperature

-25+65℃