30-600Mhz 50W Wide Band Power Amplifier Module
The 30-600Mhz 50W wide bandpower amplifier module engineered for general-purpose applications, offering an exceptionally wide operating frequency range of 30-600MHz. This broad spectrum makes it highly versatile and adaptable to a variety of operational environments. Thehigh power amplifier employs Class AB Gallium Nitride (GaN) technology on a Silicon Carbide (SiC) substrate, which provides superior performance, efficiency, and reliability. The GaN design ensures high power density and minimizes thermal issues, making it ideal for demanding applications.
One of the standout features of thepower amplifier is its instantaneous wide bandwidth, allowing it to handle a broad range of frequencies without any performance degradation. This capability is particularly beneficial in applications that require rapid frequency changes. Additionally, theamplifier modules features 50 Ohm input and output impedance, ensuring seamless integration with standard RF systems and eliminating the need for additional matching networks.
Thehigh power amplifier is also notable for its small size and lightweight design, making it easy to integrate into various systems without adding significant bulk or weight. Despite its compact form, the amplifier modules is built with high-quality components and a robust design, ensuring high reliability and ruggedness. It is capable of withstanding demanding operational conditions, making it a reliable choice for a wide range of applications, including telecommunications, radar systems, electronic warfare, test and measurement equipment, and industrial and commercial RF systems.
The thermal management of thepower amplifier module is enhanced by patented technology, with the GaN substrate attached to a copper subcarrier. This innovative design optimizes heat dissipation, reducing the risk of overheating and extending the lifespan of the device. Overall, thepower amplifier combines advanced GaN technology with innovative thermal management, making it an ideal choice for any application requiring high-performance amplification across a wide frequency range.
Item name | Technical parameters |
working frequency | 30-600MHz |
Saturated power output | 47±1dBm |
Gain | 47±2dB |
In-band flatness | |
Working current | ≤5A |
Input and output VSWR | ≤1.5 |
Out-of-band spurs | 9kHz~1GHz:≤-36dBm/30kHz1GHz~12.75GHz:≤-30dBm/30KHz |
Maximum lossless | dBm |
Operating Voltage | DC+28V |
Power supply interface | 2W2 |
RF port | SMA |
Monitoring interface | DB9: 1:TEMP, 3:VSWR |
Operating temperature | -10~+55℃ |
Relative humidity | 5%~95%,No condensation |
Storage temperature | -25~+65℃ |