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high power amplifier

30-600Mhz 50W Wide Band Power Amplifier Module

ZD-PA-30/600M-50W
The 30-600Mhz 50W wide band power amplifier module is designed for general-purpose use, operating across a broad frequency range of 30-600MHz. Utilizing Class AB Gallium Nitride (GaN) technology on a Silicon Carbide (SiC) substrate attached to a copper subcarrier, this high power amplifier ensures enhanced thermal handling through patented technology. It features instantaneous wide bandwidth, 50 Ohm input/output impedance, and a compact, lightweight design, making it highly reliable and rugged for various applications.
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The 30-600Mhz 50W wide bandpower amplifier module engineered for general-purpose applications, offering an exceptionally wide operating frequency range of 30-600MHz. This broad spectrum makes it highly versatile and adaptable to a variety of operational environments. Thehigh power amplifier employs Class AB Gallium Nitride (GaN) technology on a Silicon Carbide (SiC) substrate, which provides superior performance, efficiency, and reliability. The GaN design ensures high power density and minimizes thermal issues, making it ideal for demanding applications.

One of the standout features of thepower amplifier is its instantaneous wide bandwidth, allowing it to handle a broad range of frequencies without any performance degradation. This capability is particularly beneficial in applications that require rapid frequency changes. Additionally, theamplifier modules features 50 Ohm input and output impedance, ensuring seamless integration with standard RF systems and eliminating the need for additional matching networks.

Thehigh power amplifier is also notable for its small size and lightweight design, making it easy to integrate into various systems without adding significant bulk or weight. Despite its compact form, the amplifier modules is built with high-quality components and a robust design, ensuring high reliability and ruggedness. It is capable of withstanding demanding operational conditions, making it a reliable choice for a wide range of applications, including telecommunications, radar systems, electronic warfare, test and measurement equipment, and industrial and commercial RF systems.

The thermal management of thepower amplifier module is enhanced by patented technology, with the GaN substrate attached to a copper subcarrier. This innovative design optimizes heat dissipation, reducing the risk of overheating and extending the lifespan of the device. Overall, thepower amplifier combines advanced GaN technology with innovative thermal management, making it an ideal choice for any application requiring high-performance amplification across a wide frequency range.

Item name

Technical parameters

working frequency

30-600MHz

Saturated power output

47±1dBm

Gain

47±2dB

In-band flatness

Working current

≤5A

Input and output VSWR

≤1.5

Out-of-band spurs

9kHz1GHz≤-36dBm/30kHz1GHz12.75GHz≤-30dBm/30KHz

Maximum lossless

dBm

Operating Voltage

DC+28V

Power supply interface

2W2

RF port

SMA

Monitoring interface

DB9: 1:TEMP, 3:VSWR

Operating temperature

-10+55℃

Relative humidity

5%95%No condensation

Storage temperature

-25+65℃